Effects of salty-developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense pattern transfer-Reference-Cited by-同舟云学术

Effects of salty-developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense pattern transfer

Published:2010-11 Issue:6 Volume:28 Page:C6S23-C6S27
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Yan M.,Lee J.,Ofuonye B.,Choi S.,Jang J. H.,Adesida I.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3504497

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