Plasma deposition of SiO2 gate insulators for a-Si thin-film transistors-Reference-Cited by-同舟云学术

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Plasma deposition of SiO2 gate insulators for a-Si thin-film transistors

Published:1988-03 Issue:2 Volume:6 Page:517
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Dresner J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding the contributions of F–, HF, and HF2– to the etching of SiO2 and unveiling the reaction kinetics to represent etching behavior of SiO2 up to pH 5;Applied Surface Science;2024-06

2. Effects of interface and bulk properties of gate-dielectric on the performance and stability of hydrogenated amorphous silicon thin-film transistors;Journal of Applied Physics;2015-12-21

3. Modelling of a microwave flowing oxygen discharge: application to remote plasma enhanced CVD of silica films;Plasma Sources Science and Technology;2002-05-18

4. Aging of photochemical vapor deposited silicon oxide thin films;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-03

5. Remote microwave plasma-enhanced chemical vapour deposition of insulating coatings (SiO2) on metallic substrates: film properties;Surface and Coatings Technology;1996-03

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