Molecular beam epitaxy of polar III-nitride resonant tunneling diodes-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of polar III-nitride resonant tunneling diodes

Published:2021-03 Issue:2 Volume:39 Page:023409
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Encomendero Jimy¹^ORCID,Islam SM¹,Jena Debdeep¹²³^ORCID,Grace Xing Huili¹²³^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853

2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853

3. Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853

Funder

Air Force Office of Scientific Research

Semiconductor Research Corporation

NSF

Office of Naval Research

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/am-pdf/10.1116/6.0000775

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A switchable high-sensitivity strain sensor based on piezotronic resonant tunneling junctions;Nano Research;2024-09-05

2. High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes;Japanese Journal of Applied Physics;2024-08-01

3. Development of in situ characterization techniques in molecular beam epitaxy;Journal of Semiconductors;2024-03-01

4. Defeating broken symmetry with doping: Symmetric resonant tunneling in noncentrosymetric heterostructures;Physical Review B;2023-03-02

5. Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation;Applied Physics Letters;2023-02-06

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