Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics-Reference-Cited by-同舟云学术

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Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics

Published:2006 Issue:2 Volume:24 Page:710
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Gottlob Heinrich D. B.,Mollenhauer Thomas,Wahlbrink Thorsten,Schmidt Mathias,Echtermeyer Tim,Efavi Johnson K.,Lemme Max C.,Kurz Heinrich

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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