Gas-phase surface functionalization of SiNx with benzaldehyde to increase SiO2 to SiNx etch selectivity in atomic layer etching
Author:
Affiliation:
1. Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, Colorado 80401
2. Lam Research Corporation, 4650 Cushing Parkway, Fremont, California 94538
Funder
Lam Research Corporation
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://avs.scitation.org/doi/pdf/10.1116/6.0001046
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2. Atomic Layer Etching of SiO2 for Nanoscale Semiconductor Devices: A Review;Applied Science and Convergence Technology;2023-12-28
3. Plasma application in atomic layer etching;Physics of Plasmas;2023-08-01
4. In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF4/H2 and H2 Plasmas;ACS Applied Materials & Interfaces;2023-07-13
5. Area-Selective Atomic Layer Deposition of Ruthenium Thin Films Using Aldehyde Inhibitors;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05
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