Modification of near band edge emission and structure with Ga-related clusters in Ga-doped ZnO nanocrystal films-Reference-Cited by-同舟云学术

Modification of near band edge emission and structure with Ga-related clusters in Ga-doped ZnO nanocrystal films

Published:2020-01 Issue:1 Volume:38 Page:012210
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Torchynska Tetyana V.¹^ORCID,El Filali Brahim²,Ballardo Rodriguez Chetzyl I.²,Polupan Georgiy³^ORCID,Shcherbyna Lyudmula⁴

Affiliation:

1. Instituto Politécnico Nacional, ESFM, Av. IPN, México City 07738, Mexico

2. Instituto Politécnico Nacional, UPIITA, Av. IPN, México City 07320, Mexico

3. Instituto Politécnico Nacional, ESIME, Av. IPN, México City 07738, Mexico

4. V. Lashkaryov Institute of Semiconductor Physics at NASU, Prospect Nauki 45, Kyiv 03028, Ukraine

Funder

SIP IPN Mexico

Consejo De Ciencia, Innovación Y Tecnología Del Estado De Yucatán

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5133063

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