Full-wafer technology for large-scale laser processing and testing-Reference-Cited by-同舟云学术

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Full-wafer technology for large-scale laser processing and testing

Published:1991-11 Issue:6 Volume:9 Page:2886
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Voegeli O.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Beam Etching of Compound Semiconductors;Handbook of Advanced Plasma Processing Techniques;2000

2. Use of atomic force microscopy for analysis of high performance InGaAsP/InP semiconductor lasers with dry-etched facets;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05

3. Ion-Beam-Etched Laser Facets for InP-based Lasers;Japanese Journal of Applied Physics;1997-12-15

4. Characteristics of Gain-Guided Laser Diodes with Cylindrical-Mirror Cavity;Optical Review;1995-11

5. Rapid Isothermal Processing (RIP);Handbook of Compound Semiconductors;1995

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