Hydrogen adsorption on some a‐Ge1−xCx:H films prepared by radio‐frequency sputtering-Reference-Cited by-同舟云学术

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Hydrogen adsorption on some a‐Ge1−xCx:H films prepared by radio‐frequency sputtering

Published:1988-09 Issue:5 Volume:6 Page:2910-2913
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Shinar Ruth

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.575450

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation and properties of GeC thin films deposited by reactive RF magnetron sputtering;Acta Physica Sinica;2008

2. Optoelectronic and structural properties of a-Ge1−xCx:H prepared by rf reactive cosputtering;Journal of Applied Physics;1998-07

3. Structural Properties of a-Ge1-xCx:H Alloys Prepared by the RF Sputtering Technique;MRS Proceedings;1997

4. Chemical bonding in thin Ge/C films deposited from tetraethylgermanium in an r.f. glow discharge—an FTIR study;Thin Solid Films;1995-02

5. Vibrational, optical and electronic properties of the hydrogenated amorphous germanium-carbon alloy system;Philosophical Magazine B;1994-01

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