Improved cathodoluminescence properties of GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires fabricated on (111)B facet by glancing-angle molecular beam epitaxy-Reference-Cited by-同舟云学术

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Improved cathodoluminescence properties of GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires fabricated on (111)B facet by glancing-angle molecular beam epitaxy

Published:1996-11 Issue:6 Volume:14 Page:3550
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Tomita N.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaInAsP/InP Quantum Wire Lasers;IEEE Journal of Selected Topics in Quantum Electronics;2009

2. Nonlinear optical absorption of semiconductor quantum wires: Photoexcitation dynamical effects;Physical Review B;2003-10-08

3. Strained InGaAs/AlGaAs tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

4. Local probe techniques for luminescence studies of low-dimensional semiconductor structures;Journal of Applied Physics;1998-08-15

5. Photoluminescence study on twenty GaAs/Al[sub 0.3]Ga[sub 0.7]As tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-03

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