Annealing effects of aluminum silicate films grown on Si(100)-Reference-Cited by-同舟云学术

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Annealing effects of aluminum silicate films grown on Si(100)

Published:2002-05 Issue:3 Volume:20 Page:865-872
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Cho M.-H.,Rho Y. S.,Choi H.-J.,Nam S. W.,Ko D.-H.,Ku J. H.,Kang H. C.,Noh D. Y.,Whang C. N.,Jeong K.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1472422

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2. Curing defects in plasma-enhanced atomic layer deposition of Al2O3 by six methods;Materials Science in Semiconductor Processing;2022-12

3. Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate;Materials;2021-06-16

4. STEM-EELS investigation of c-Si/a-AlO interface for solar cell applications;Micron;2021-06

5. Room-Temperature Atomic Layer Deposition of Aluminum Silicate and its Application to Na- and K-Ion Sorption;Journal of The Electrochemical Society;2020-09-14

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