Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development-Reference-Cited by-同舟云学术

Nanofabrication of super-high-aspect-ratio structures in hydrogen silsesquioxane from direct-write e-beam lithography and hot development

Published:2008-11 Issue:6 Volume:26 Page:2632-2635
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ocola L. E.¹,Tirumala V. R.²

Affiliation:

1. Center for Nanoscale Materials, Argonne National Laboratory, Argonne Illinois 60559

2. Polymers Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20878

Funder

DOE

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

5. Comparison of hydrogen silsesquioxane development methods for sub-10 nm electron beam lithography using accurate linewidth inspection;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11