W and WSix Ohmic contacts on p- and n-type GaN-Reference-Cited by-同舟云学术

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W and WSix Ohmic contacts on p- and n-type GaN

Published:1999-07 Issue:4 Volume:17 Page:1221-1225
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Cao X. A.,Ren F.,Pearton S. J.,Zeitouny A.,Eizenberg M.,Zolper J. C.,Abernathy C. R.,Han J.,Shul R. J.,Lothian J. R.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581799

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Mg Dopant Activation in p-GaN and Enhanced Electroluminescence in InGaN/GaN LEDs by Plasma Immersion Ion Implantation of Phosphorus;physica status solidi (a);2018-06-25

2. Thermal decomposition of tungsten hexacarbonyl: CVD of W-containing films under Pd codeposition and VUV assistance;physica status solidi (c);2015-06-05

3. Fabrication of near- or mid-infrared wire-grid polarizers with WSi wires;Micro-Optics 2012;2012-06-01

4. Grooved infrared polarizers with a reduced reflectance;SPIE Proceedings;2006-12-27

5. XTEM and TFXRD investigations of ohmic Ti/Al/Ti/Au/WSiN contacts on AlGaN/GaN HFET layer systems;Semiconductor Science and Technology;2002-02-18

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