Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 43 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications;Physica Scripta;2023-08-01
2. On the design of improved resistive sensor interface using 32 nm CNFET;Materials Today: Proceedings;2021
3. Carbon Nanotube and Nanowires for Future Semiconductor Devices Applications;Nanoelectronics;2019
4. Gate bias stress effect in single-walled carbon nanotubes field-effect-transistors;Diamond and Related Materials;2018-04
5. Design and analysis of a gate-all-around CNTFET-based SRAM cell;Journal of Computational Electronics;2017-09-22
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