Fabrication of high performance GaN modulation doped field effect transistors-Reference-Cited by-同舟云学术

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Fabrication of high performance GaN modulation doped field effect transistors

Published:2000-03 Issue:2 Volume:18 Page:750-753
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Bardwell J. A.,Foulds I.,Lamontagne B.,Tang H.,Webb J. B.,Marshall P.,Rolfe S. J.,Stapledon J.,MacElwee T. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582172

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