Influence of magnetic field strength on plasma, microstructure, and mechanical properties of Cr thin films deposited by MPPMS and DOMS

Abstract

Magnetic field strength plays a vital role in determining the discharge behavior in magnetron sputtering. It enables the customization of discharge plasma and thin film properties. This study aims to compare the discharge behavior and investigate the potential effects on Cr thin films deposited using modulated pulsed power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS) at different magnetic field strengths. The magnetic field strength in the target center increased from 67 to 91 mT tuning by the target thickness from 8 to 3 mm, and the average electron temperature was higher in a DOMS discharge than that in a MPPMS discharge. For both MPPMS and DOMS deposited Cr thin films, the refractive index and mechanical properties have been promoted with the increase in magnetic field strength, and almost all Cr thin films showed a Cr(110) preferred orientation. The hardness and modulus increased from 11.3 and 275.6 to 13.8 to 285.1 GPa for MPPMS deposited thin films, while the hardness and modulus for DOMS Cr thin films were much higher, increasing from 11.2 and 283.6 to 17.3 to 297.2 GPa. The possible differences between MPPMS and DOMS were analyzed based on the plasma global model and empirical equations. The analysis revealed that the high discharge current of DOMS is primarily caused by the possibility of back-attraction ion difference between MPPMS and DOMS. The voltage oscillation in a DOMS discharge provides sufficient time for ionized ions to escape from cathode attraction. Regarding the difference in deposition rate, it should at least be the cooperative results of the target back-attraction effect and ion evacuation time difference in plasma.