Reactant supply in reactive ion etching
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.569959
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spectroscopic study of plasma using zirconium tetra-tert-butoxide for the plasma enhanced chemical vapor deposition of zirconium oxide;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001
2. Control of Ion Energy in a Capacitively Coupled Reactive Ion Etcher;Journal of The Electrochemical Society;1998-12-01
3. Dissociative charge transfer reactions of Ar+, Ne+, and He+ with CF4 from thermal to 50 eV;The Journal of Chemical Physics;1990-02-15
4. Comparison of etch rates of silicon nitride, silicon dioxide, and polycrystalline silicon upon O2 dilution of CF4 plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-11
5. Dynamic analyses in mass spectrometry of SF6 plasma during etching of silicon;Vacuum;1989-01
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