Practical approach for modeling extreme ultraviolet lithography mask defects-Reference-Cited by-同舟云学术

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Practical approach for modeling extreme ultraviolet lithography mask defects

Published:2002 Issue:1 Volume:20 Page:81
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Gullikson E. M.,Cerjan C.,Stearns D. G.,Mirkarimi P. B.,Sweeney D. W.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 91 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation Research on Reflective Near Field of EUV Mask Blank Defects;Material Sciences;2024

2. EUV mask model based on modified Born series;Optics Express;2023-08-03

3. 极紫外光刻掩模缺陷检测与补偿技术研究;Laser & Optoelectronics Progress;2022

4. Defect repairs for the extreme ultraviolet mask;Extreme Ultraviolet (EUV) Lithography XII;2021-02-21

5. Computational Study of Extreme Ultraviolet Vote-Taking Lithography for Defect Repair;Journal of Nanoscience and Nanotechnology;2020-08-01

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