Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxy
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Published:1985-03
Issue:2
Volume:3
Page:666
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
29 articles.
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