Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration-Reference-Cited by-同舟云学术

Direct MBE growth of metamorphic nBn infrared photodetectors on 150 mm Ge-Si substrates for heterogeneous integration

Published:2019-05 Issue:3 Volume:37 Page:031216
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Fastenau Joel M.¹,Lubyshev Dmitri¹,Nelson Scott A.¹,Fetters Matthew¹,Krysiak Hubert¹,Zeng Joe¹,Kattner Michael¹,Frey P.¹,Liu Amy W. K.¹,Morgan Aled O.²,Edwards Stuart A.²,Dennis Richard³,Beech Kim³,Burrows Doug³,Patnaude Kelly³,Faska Ross³,Bundas Jason³,Reisinger Alex³,Sundaram Mani³

Affiliation:

1. IQE Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015

2. IQE Silicon, Beech House, Cypress Drive, St. Mellons, Cardiff CF3 0LW, United Kingdom

3. QmagiQ LCC, 22 Cotton Road, Unit H Suite 180, Nashua, New Hampshire 03063

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5088784

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