Electronic structure of ideal and nonideal metal/GaAs contacts-Reference-Cited by-同舟云学术

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Electronic structure of ideal and nonideal metal/GaAs contacts

Published:1991-07 Issue:4 Volume:9 Page:2140
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

van Schilfgaarde Mark

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of an electric dipole at metal-semiconductor interfaces;Physical Review B;2001-11-01

2. Recent advances in Schottky barrier concepts;Materials Science and Engineering: R: Reports;2001-11

3. Low temperature work function variations of the Au/GaSb (110) interface: Experimental results and theoretical model;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-09

4. Pressure dependence of Cu, Ag, andFe/n−GaAsSchottky barrier heights;Physical Review B;2001-07-02

5. Ab initiostudy of theCoSi2(111)/Si(111)interface;Physical Review B;1999-12-15

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