Nonlinear characteristics induced by carrier accumulation in InAs/GaAs superlattice cap layer on GaAs/GaAlAs multi-quantum well structure
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Published:1996-03-01
Issue:2
Volume:14
Page:638
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
2 articles.
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1. 4.3.7 References for 4.3;Landolt-Börnstein - Group III Condensed Matter
2. 4.3.3 InAs and In{1-y}Ga{y}As;Landolt-Börnstein - Group III Condensed Matter