Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures;Semiconductors;2013-07
2. X-ray diagnostics of semiconductor heterostructures: Some achievements and perspectives for development;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2010-02
3. The electrical and structural properties of In y Ga1 − y As/In x Al1 − x As/InP quantum wells with different InAs content;Crystallography Reports;2010-01
4. Low temperature electron magnetotransport in InxGa1-xAs/In0.52Al0.48As quantum wells with high electron density;Journal of Physics: Conference Series;2009-02-01
5. High indium metamorphic HEMT on a GaAs substrate;Journal of Crystal Growth;2003-04
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