CaF2 overlayers to preserve the ideal termination of Sb/GaAs(110)-Reference-Cited by-同舟云学术

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CaF2 overlayers to preserve the ideal termination of Sb/GaAs(110)

Published:1994-07 Issue:4 Volume:12 Page:1158-1169
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Green A. M.,Spicer W. E.,Kim C.,Cao R.,Pianetta P.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579184

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PASSIVATION INVESTIGATIONS OF GaAs (100) SURFACE;Physics and Technology of Thin Films;2004-06

2. Chemical reactions of triethylantimony on GaAs(100);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-11

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