Dry etching of amorphous-Si gates for deep sub-100 nm silicon-on-insulator complementary metal–oxide semiconductor-Reference-Cited by-同舟云学术

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Dry etching of amorphous-Si gates for deep sub-100 nm silicon-on-insulator complementary metal–oxide semiconductor

Published:2002 Issue:1 Volume:20 Page:191
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Yost D.,Forte T.,Fritze M.,Astolfi D.,Suntharalingam V.,Chen C. K.,Cann S.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser applications in nanotechnology: nanofabrication using laser ablation and laser nanolithography;Physics-Uspekhi;2013-07-31

2. Nanolithography in microelectronics: A review;Technical Physics;2011-08

3. Influence of plasma-etch damage on the interface states in SOI structures investigated by capacitance–voltage measurements and simulations;Semiconductor Science and Technology;2009-11-13

4. Measurement of Amount of Pattern Trim and Surface Chemistry for Organic Resist Etching in an Inductively Coupled Plasma in SO2–O2Gas Mixtures;Japanese Journal of Applied Physics;2007-08-06

5. Projection optical lithography;Materials Today;2005-02

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