In situ chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control-Reference-Cited by-同舟云学术

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In situ chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

Published:2005 Issue:4 Volume:23 Page:1386
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Cho Soon,Rubloff Gary W.,Aumer Michael E.,Thomson Darren B.,Partlow Deborah P.,Parikh Rinku,Adomaitis Raymond A.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015

2. Influence of growth process scheme on the properties of AlGaN/AlN/GaN heterostructures;physica status solidi (c);2013-01-24

3. Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC;Journal of Electronic Materials;2007-10-09

4. In Situ Measurement of Nitrogen during Growth of 4H-SiC by CVD;Materials Science Forum;2007-09

5. Real-time sensing and metrology for atomic layer deposition processes and manufacturing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007

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