Summary Abstract: Growth of device-quality GaAs and (Al,Ga)As on (211)-oriented silicon substrates, with thin (0.1 μm) superlattice buffer layers
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Published:1986-03
Issue:2
Volume:4
Page:641
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
2 articles.
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