The structure of CdTe–InSb multilayers grown on (001) InSb using molecular beam epitaxy-Reference-Cited by-同舟云学术

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The structure of CdTe–InSb multilayers grown on (001) InSb using molecular beam epitaxy

Published:1991-01 Issue:1 Volume:9 Page:71-75
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Williams G. M.,Cullis A. G.,Barnett S. J.,Whitehouse C. R.,Golding T. D.,Dinan J. H.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.577133

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-assembled formation and transformation of In/CdZnTe(110) nano-rings into camel-humps;Applied Physics Letters;2012-05-21

2. The origin of hillocks in (Hg, Cd)Te grown by MOVPE;Journal of Electronic Materials;1998-06

3. Molecular‐beam‐epitaxy growth of CdTe on InSb (110) monitoredin situby Raman spectroscopy;Journal of Applied Physics;1995-09-15

4. Properties of II–VI/III–V heterovalent interfaces;Journal of Crystal Growth;1991-12

5. An x-ray photoelectron spectroscopy study of bonding at II–VI/III–V heterovalent interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07

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