Mechanism of dopant segregation to SiO[sub 2]/Si(001) interfaces-Reference-Cited by-同舟云学术

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Mechanism of dopant segregation to SiO[sub 2]/Si(001) interfaces

Published:2000 Issue:4 Volume:18 Page:2160
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Dabrowski J.,Casali R. A.,Müssig H.-J.,Baierle R.,Caldas M. J.,Zavodinsky V.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing the factors influencing grain boundary segregation of P, As in Si: Insights from first-principles;Acta Materialia;2019-04

2. Influence of Alkali Ions on Tribological Properties of Silicon Surface;Tribology Letters;2015-10-17

3. A first-principles study of As doping at a disordered Si–SiO2interface;Journal of Physics: Condensed Matter;2013-12-12

4. Characterization of Arsenic segregation at Si/SiO2 interface by 3D atom probe tomography;Thin Solid Films;2010-02

5. Arsenic defect complexes atSiO2/Siinterfaces: A density functional theory study;Physical Review B;2009-11-30

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