Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications-Reference-Cited by-同舟云学术

Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications

Published:2018-03 Issue:2 Volume:36 Page:021202
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Fernando Nalin S.,Carrasco Rigo A.,Hickey Ryan,Hart John,Hazbun Ramsey,Schoeche Stefan,Hilfiker James N.,Kolodzey James¹,Zollner Stefan²

Affiliation:

1. Department of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716

2. Department of Physics, New Mexico State University, MSC 3D, P.O. Box 30001, Las Cruces, New Mexico 88003

Funder

National Science Foundation

DOD | United States Army | RDECOM | Army Research Office

DOD | USAF | AFMC | Air Force Office of Scientific Research

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/am-pdf/10.1116/1.5001948

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