Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs-Reference-Cited by-同舟云学术

Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs

Published:2011-05 Issue:3 Volume:29 Page:03C104
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Kawasaki Jason K.,Timm Rainer,Buehl Trevor E.,Lundgren Edvin,Mikkelsen Anders,Gossard Arthur C.,Palmstrøm Chris J.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3547713

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1. Bias-Dependent Carrier Dynamics and Terahertz Performance of ErAs:In(Al)GaAs Photoconductors;IEEE Transactions on Terahertz Science and Technology;2022-07

2. Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation;APL Materials;2017-09

3. Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2017-05

4. Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation;Applied Physics Letters;2016-05-02

5. Effects of nanoscale embedded Schottky barriers on carrier dynamics in ErAs:GaAs composite systems;Physical Review B;2015-10-05