Channel temperature measurements of InxAl1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy-Reference-Cited by-同舟云学术

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Channel temperature measurements of InxAl1−xN/GaN high electron mobility transistors on Si(111) using optical spectroscopy

Published:2015-09 Issue:5 Volume:33 Page:051203
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Kyaw Lwin Min¹,Bera Lakshmi Kanta,Bhat Thirumaleshwara N.,Liu Yi¹,Tan Hui Ru,Dolmanan Surani Bin,Chor Eng Fong¹,Tripathy Sudhiranjan²

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore

2. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602, Singapore

Funder

Agency for Science, Technology and Research (A*STAR)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4927366

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