Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx-Reference-Cited by-同舟云学术

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Influence of hydrogen passivation on the luminescence of Si quantum dots embedded in Si3Nx

Published:2016-11 Issue:6 Volume:34 Page:061202
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Cadogan Carolyn C.,Goncharova Lyudmila V.,Simpson Peter J.,Nguyen Peter H.¹,Wang Zhiqang Q.,Sham Tsun-Kong

Affiliation:

1. Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada

Funder

Natural Sciences and Engineering Research Council of Canada (NSERC)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4963369

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Beam Modification for Si Photonics;Physics;2022-03-22

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