Effects of grid bias on ZnO/α-Al2O3(0001) heteroepitaxy-Reference-Cited by-同舟云学术

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Effects of grid bias on ZnO/α-Al2O3(0001) heteroepitaxy

Published:1999-09 Issue:5 Volume:17 Page:3003-3007
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Doh S. J.,Park S. I.,Cho T. S.,Je Jung Ho

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581973

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Influence of gate dielectric/channel interface engineering on the stability of amorphous indium gallium zinc oxide thin-film transistors;physica status solidi (a);2014-05-05

3. ZnO films deposited by optimized PLD technique with bias voltages;physica status solidi (c);2010-02

4. Growth of ZnO crystal on sapphire and nitridated sapphire substrates at 1000°C by halide vapor phase epitaxy;Materials Letters;2010-01

5. Effect of Plused Negative Bias on Nucleation and Morphological Evolution of ZnO Films Deposited by Reactive Radio-frequency Magnetron Sputtering;Journal of Inorganic Materials;2009-06-18

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