Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors
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Published:2015-01
Issue:1
Volume:33
Page:01A103
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ISSN:2166-2746
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Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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language:en
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Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Author:
Erlbacher Tobias,Schwarzmann Holger,Bauer Anton J.,Döhler Gottfried H.,Schreivogel Martin,Lutz Theresa,Guillén Francesco H.,Graf Jürgen,Fix Richard,Frey Lothar
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials