Model for an inductively coupled Ar/c-C4F8 plasma discharge-Reference-Cited by-同舟云学术

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Model for an inductively coupled Ar/c-C4F8 plasma discharge

Published:2002-01 Issue:1 Volume:20 Page:14-23
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Rauf Shahid,Ventzek Peter L. G.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1417538

Cited by 65 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. PLASMA PARAMETRS AND SILICON ETCHING KINETICS IN CF4 + C4F8 + O2 MIXTURE: EFFECT OF CF4/C4F8 MIXING RATIO;ChemChemTech;2024-05-04

2. Construction and validation of C3F8 electron impact and heavy particle reaction scheme for modeling plasma discharges;Physics of Plasmas;2024-03-01

3. ON THE EFFECT OF OXYGEN ON PLASMA CHEMICAL KINETICS IN CF4 + O2 AND C4F8 + O2 GAS MIXTURES;ChemChemTech;2024

4. Time-varying mechanism of ion composition in a pulse-modulated Ar/C₄F₈/O₂ dual-frequency capacitively coupled plasma;Japanese Journal of Applied Physics;2023-12-26

5. Effects of C4F8 plasma polymerization film on etching profiles in the Bosch process;Journal of Vacuum Science & Technology A;2023-10-02

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