Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process-Reference-Cited by-同舟云学术

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Resolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process

Published:2004 Issue:1 Volume:22 Page:136
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Yoshizawa Masaki,Oguni Kumiko,Nakano Hiroyuki,Amai Keiko,Nohama Shoji,Moriya Shigeru,Kitagawa Tetsuya

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Latent Image Quality on Line Edge Roughness in Electron Beam Lithography;Japanese Journal of Applied Physics;2004-06-29

2. Analysis of critical dimension uniformity for LEEPL;SPIE Proceedings;2004-05-20

3. Impacts of 30-nm-thick resist on improving resolution performance of low-energy electron beam lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

4. Challenges to Ultra-thin Resist Process for LEEPL;Journal of Photopolymer Science and Technology;2004

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