Electrochemical behavior of copper chemical mechanical polishing in KIO[sub 3] slurry-Reference-Cited by-同舟云学术

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Electrochemical behavior of copper chemical mechanical polishing in KIO[sub 3] slurry

Published:2002 Issue:2 Volume:20 Page:608
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hsu Jyh-Wei,Chiu Shao-Yu,Tsai Ming-Shih,Dai Bau-Tong,Feng Ming-Shiann,Shih Han-C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Photocathodic Analysis Platform with Quasi-Core/Shell-Structured TiO2@Cu2O for Sensitive Detection of H2O2 Release from Living Cells;Analytical Chemistry;2015-09-30

2. Chip Integration;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

3. A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing;Thin Solid Films;2005-04

4. Electrochemical characterization of copper chemical mechanical planarization in KIO3 slurry;Applied Surface Science;2004-05

5. The pH Effect On Chemical Mechanical Planarization Of Copper;MRS Proceedings;2003

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