Susceptor and proximity rapid thermal annealing of carbon-implanted InP-Reference-Cited by-同舟云学术

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Susceptor and proximity rapid thermal annealing of carbon-implanted InP

Published:1990-11 Issue:6 Volume:8 Page:1285
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Katz A.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compared rapid thermal annealing procedures of InP;Materials Science and Engineering: B;2002-03

2. The influence of TiB2-thin film thickness on metal–GaAs structural characteristics;Thin Solid Films;2000-09

3. The effect of rapid thermal annealing on structural and electrical properties of TiB2 thin films;Thin Solid Films;1997-05

4. Introduction: History and Perspectives of Rapid Thermal Processing;Advances in Rapid Thermal and Integrated Processing;1996

5. Manufacturing Equipment Issues in Rapid Thermal Processing11Based in part on an invited presentation at the SPIE Workshop on Rapid Thermal and Integrated Processing, San Jose, California, September 9, 1991.;Rapid Thermal Processing;1993

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