Fabrication of silicon quantum wires by anisotropic wet chemical etching and thermal oxidation-Reference-Cited by-同舟云学术

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Fabrication of silicon quantum wires by anisotropic wet chemical etching and thermal oxidation

Published:1995-09 Issue:5 Volume:13 Page:2137
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Liu J. L.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemically anisotropic single-crystalline silicon nanotetrahedra;Nanotechnology;2009-10-26

2. Geometry and electronic stability of tungsten encapsulated silicon nanotubes;The Journal of Chemical Physics;2008-07-21

3. The synthesis of MWNTs/SWNTs multiple phase nanowire arrays in porous anodic aluminum oxide templates;Materials Science and Engineering: A;2003-08

4. Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates;Science in China Series B;2002

5. The energy gap of clusters, nanoparticles, and quantum dots;Handbook of Thin Films;2002

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