Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy

Published:2007 Issue:6 Volume:25 Page:1794
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Polyakov A. Y.,Smirnov N. B.,Belogorokhov A. I.,Govorkov A. V.,Kozhukhova E. A.,Osinsky A. V.,Xie J. Q.,Hertog B.,Pearton S. J.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Equivalence of donor and acceptor fits of temperature dependent Hall carrier density and Hall mobility data: Case of ZnO;Journal of Applied Physics;2014-04-28

2. Smooth surface, low electron concentration, and high mobility ZnO films on c-plane sapphire;Journal of Crystal Growth;2011-06

3. Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells;Journal of Electronic Materials;2009-11-18

4. Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor deposition;Applied Surface Science;2009-05

5. Persistent photoconductivity in MgZnO alloys;Semiconductors;2009-05

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