Investigation of the semiconductor–oxide electrolyte interface in GaAs utilizing electrolyte electroreflectance
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.570589
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependence of electroreflectance spectroscopy in Ga0.5In0.5P alloy;Semiconductor Science and Technology;2004-05-19
2. Optical properties of GaAs at ZnSe/GaAs/GaAs by phase selection in photoreflectance;SPIE Proceedings;2000-12-15
3. Interface‐state density at SiO2/GaAs assessed by direct measurement of surface band bending;Applied Physics Letters;1996-11-11
4. Electroreflectance Study of(AlxGa1-x)0.5In0.5PAlloys;Japanese Journal of Applied Physics;1996-02-15
5. Sulfide-passivated GaAs (001). II. Electronic properties;Physical Review B;1996-02-15
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