Effect of diffusion and drift on generation–recombination in HgCdTe photoconductors
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Link
http://avs.scitation.org/doi/pdf/10.1116/1.571730
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the possibility of suppressing the saturation of photoelectric amplification of weak optical emission in semiconductors by forming near-contact variband layers;Technical Physics Letters;2001-06
2. Limitation of a giant amplification surge by photoinduced space charge accompanying an increase in the concentration of recombination centers in intrinsic threshold photoresistors with extracting contacts;Technical Physics Letters;1999-03
3. Increasing the concentration of recombination impurities as a means to suppress the amplification saturation effect in intrinsic threshold photoresistors with extracting contacts and impurity recombination of photo-generated carriers;Technical Physics Letters;1997-01
4. On 1/f noise characteristics for 0.1 eV HgCdTe photoconductors;International Journal of Infrared and Millimeter Waves;1987-02
5. Effects of blocking contacts on generation‐recombination noise and responsivity in intrinsic photoconductors;Journal of Applied Physics;1984-09-15
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