Test structures for secondary ion mass spectrometry analysis of patterned silicon wafers-Reference-Cited by-同舟云学术

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Test structures for secondary ion mass spectrometry analysis of patterned silicon wafers

Published:1992-07 Issue:4 Volume:10 Page:2880-2886
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Stevie F. A.,Cochran G. W.,Kahora P. M.,Russell W. A.,Linde N.,Wroge D. M.,Garcia A. M.,Geva M.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.577724

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depth profiling of ultra-shallow implants using a Cameca IMS-6f;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

2. Approach for a three-dimensional on-chip quantification by secondary-ion mass spectrometry analysis;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-05

3. Accurate base and collector current modeling of polysilicon emitter bipolar transistors: Quantification of hole surface recombination velocity;Journal of Applied Physics;1996-03

4. Ultra shallow doping profiling with SIMS;Reports on Progress in Physics;1995-10-01

5. Materials and failure analysis methods and systems used in the development and manufacture of silicon integrated circuits;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-07

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