Influence of slight deviations from TaSi2 stoichiometry on the high-temperature stability of tantalum silicide/silicon contacts-Reference-Cited by-同舟云学术

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Influence of slight deviations from TaSi2 stoichiometry on the high-temperature stability of tantalum silicide/silicon contacts

Published:1984 Issue:4 Volume:2 Page:630
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Oppolzer H.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependent of the current–voltage (I–V) characteristics of TaSi2/n-Si structure;Materials Science in Semiconductor Processing;2013-12

2. TiNxOy as a barrier between Cr-Si-(O) and aluminium thin films;Thin Solid Films;1991-05

3. Quantitative X-ray analysis of interdiffusing Ta/Si multilayer structures;Thin Solid Films;1991-04

4. Interdiffusion and short‐range order in amorphous Ta‐Si multilayer structures;Journal of Applied Physics;1990-09-15

5. Correlation between the elastic and structural properties of thin‐film tungsten silicide layers from surface acoustic wave analysis;Applied Physics Letters;1987-11-16

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