Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)
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Published:1986-07
Issue:4
Volume:4
Page:890
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
79 articles.
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