Gate-controlled modulation of charge transport in long-channel, δ-doped, heterojunction Hall-bar structures
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Published:1995-07
Issue:4
Volume:13
Page:1853
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
2 articles.
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1. Strain relaxation and dislocations in SiGe/Si structures;Materials Science and Engineering: R: Reports;1996-11
2. Quantum transport: Silicon inversion layers and InAlAs–InGaAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07