Progressive degradation of TiN∕SiON and TiN∕HfO[sub 2] gate stack triple gate SOI nFinFETs subjected to electrical stress
-
Published:2009
Issue:1
Volume:27
Page:453
-
ISSN:1071-1023
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:en
-
Short-container-title:J. Vac. Sci. Technol. B
Author:
Rafí J. M.,Simoen E.,Mercha A.,Collaert N.,Campabadal F.,Claeys C.
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics