Characterization of isothermal vapor phase epitaxial (Hg,Cd)Te-Reference-Cited by-同舟云学术

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Characterization of isothermal vapor phase epitaxial (Hg,Cd)Te

Published:1990-03 Issue:2 Volume:8 Page:1098-1102
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Lee S. B.,Magel L. K.,Tang M. F. S.,Stevenson D. A.,Tregilgas J. H.,Goodwin M. W.,Strong R. L.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.576967

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth Kinetics of Hg1-xCdxTe Epilayers by Semiclosed Open-Tube Isothermal Vapor Phase Epitaxy;Japanese Journal of Applied Physics;1998-09-15

2. Open Tube Iso-VPE of Hg_1-xCd_xTe on CdTe/Sapphire Hybrid Substrates;Materials Science Forum;1996-02

3. Vapor phase epitaxy of Hg1−xCdxTe on CdTe heteroepitaxial substrates;Journal of Crystal Growth;1995-04

4. Growth of Hg1−Cd Te epitaxial layers on (100) CdTe by chemical vapor transport under normal and reduced gravity conditions;Journal of Crystal Growth;1995-01

5. Control of Composition Profile in Mercury Cadmium Telluride Films Prepared by Isothermal Vapor Phase Epitaxy;Materials Transactions, JIM;1994

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