Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers-Reference-Cited by-同舟云学术

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Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers

Published:1985-05 Issue:3 Volume:3 Page:996-1001
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Newman N.,Chin K. K.,Petro W. G.,Kendelewicz T.,Williams M. D.,McCants C. E.,Spicer W. E.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.573374

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes;Solid-State Electronics;1996-10

2. Experimental determination of the pressure dependence of the barrier height of metal/[n-type GaAs] Schottky contacts: A critical test of Schottky-barrier models;Physical Review B;1995-06-15

3. On the Richardson constant of intimate metal‐GaAs (111)BSchottky diodes grown by molecular beam epitaxy;Journal of Applied Physics;1993-11-15

4. Thermal stability of Mo–Al Schottky metallizations on n-GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-05

5. Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs (MBE) Schottky barriers;Electronics Letters;1993

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