Investigation of the bonding strength and interface current of p-Si/n-GaAs wafers bonded by surface activated bonding at room temperature-Reference-Cited by-同舟云学术

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Investigation of the bonding strength and interface current of p-Si/n-GaAs wafers bonded by surface activated bonding at room temperature

Published:2001 Issue:6 Volume:19 Page:2114
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Howlader M. M. R.,Watanabe T.,Suga T.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 48 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Interlayer Investigations of GaN Heterostructures Integrated into Silicon Substrates by Surface Activated Bonding;Crystals;2023-01-24

4. Heterojunctions fabricated by surface activated bonding–dependence of their nanostructural and electrical characteristics on thermal process;Japanese Journal of Applied Physics;2022-11-14

5. Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding;Materials;2022-04-25

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